Chemical Etching Formula
Mo1 Pure Molybdenum
with H₂O₂(30%)+H₂SO₄(10%)
Formula Summary
The table below summarizes every parameter that defines this etching formula. Values listed as ranges scale with sheet thickness across the supported band.
Why H₂O₂(30%)+H₂SO₄(10%) for Mo1 Pure Molybdenum?
The H₂O₂(30%)+H₂SO₄(10%) formula is selected for Mo1 Pure Molybdenum because it balances oxidation rate, surface chemistry, and bath stability for this alloy class. Chemistries that etch too aggressively create excessive undercut and rough sidewalls; chemistries that are too mild require impractically long dwell times or attack the photoresist. H₂O₂(30%)+H₂SO₄(10%) sits in the productive middle for Mo1 Pure Molybdenum, which is why it appears in this reference set.
Process Window & Bath Control
The process window for this H₂O₂(30%)+H₂SO₄(10%) formula centres on 52°C and as specified. Conveyor speed spans 0.12-1.11 m/min over the 0.05-0.3 mm thickness band; the typical operating point is 0.22 m/min. Every 5°C drop in bath temperature requires roughly a 30% reduction in conveyor speed to hold the same etch depth, so temperature stability is the single biggest lever on consistency.
Design Rules & Tolerances
Design rules for this recipe: hole diameter 60-360 μm, line width 100-300 μm, single-side undercut 11-64 μm — all as a function of thickness across 0.05-0.3 mm. The higher the etch factor (this formula holds about 2.35), the tighter the achievable tolerance. Below the minimum feature sizes, yield falls off steeply, so treat those numbers as hard floors rather than targets.
• Minimum hole diameter range: 60-360 μm
• Minimum line width range: 100-300 μm
• Single-side undercut range: 11-64 μm
• Typical etch factor (EF): 2.35
Yield & Production Economics
Expect a yield in the 93.2-93.9% range for Mo1 Pure Molybdenum with H₂O₂(30%)+H₂SO₄(10%), with 93.7% typical on a well-controlled line. Most rejects trace back to upstream coating and exposure rather than to the etch bath itself, so tightening photolithography control is usually the fastest path to a higher number.
Typical Applications
Parts produced with the H₂O₂(30%)+H₂SO₄(10%) formula on Mo1 Pure Molybdenum are common in semiconductor lead frames, sputtering masks, and high-temperature electrode grids. The burr-free, stress-free nature of chemical etching makes it the preferred process wherever flatness and edge quality matter more than raw throughput.
More Molybdenum Formulas
Other formulas in the same material family.
Frequently Asked Questions
Need a Quote for This Process?
WET Etched runs production wet chemical etching lines using the H₂O₂(30%)+H₂SO₄(10%) chemistry. Send us your part drawing and quantity for a full process quote.
