Chemical Etching Formula
Mo1 Pure Molybdenum with H₂O₂(30%)+H₂SO₄(10%)

Formula Summary

The table below summarizes every parameter that defines this etching formula. Values listed as ranges scale with sheet thickness across the supported band.

Why H₂O₂(30%)+H₂SO₄(10%) for Mo1 Pure Molybdenum?

The H₂O₂(30%)+H₂SO₄(10%) formula is selected for Mo1 Pure Molybdenum because it balances oxidation rate, surface chemistry, and bath stability for this alloy class. Chemistries that etch too aggressively create excessive undercut and rough sidewalls; chemistries that are too mild require impractically long dwell times or attack the photoresist. H₂O₂(30%)+H₂SO₄(10%) sits in the productive middle for Mo1 Pure Molybdenum, which is why it appears in this reference set.

Process Window & Bath Control

The process window for this H₂O₂(30%)+H₂SO₄(10%) formula centres on 52°C and as specified. Conveyor speed spans 0.12-1.11 m/min over the 0.05-0.3 mm thickness band; the typical operating point is 0.22 m/min. Every 5°C drop in bath temperature requires roughly a 30% reduction in conveyor speed to hold the same etch depth, so temperature stability is the single biggest lever on consistency.

Design Rules & Tolerances

Design rules for this recipe: hole diameter 60-360 μm, line width 100-300 μm, single-side undercut 11-64 μm — all as a function of thickness across 0.05-0.3 mm. The higher the etch factor (this formula holds about 2.35), the tighter the achievable tolerance. Below the minimum feature sizes, yield falls off steeply, so treat those numbers as hard floors rather than targets.

Yield & Production Economics

Expect a yield in the 93.2-93.9% range for Mo1 Pure Molybdenum with H₂O₂(30%)+H₂SO₄(10%), with 93.7% typical on a well-controlled line. Most rejects trace back to upstream coating and exposure rather than to the etch bath itself, so tightening photolithography control is usually the fastest path to a higher number.

Typical Applications

Parts produced with the H₂O₂(30%)+H₂SO₄(10%) formula on Mo1 Pure Molybdenum are common in semiconductor lead frames, sputtering masks, and high-temperature electrode grids. The burr-free, stress-free nature of chemical etching makes it the preferred process wherever flatness and edge quality matter more than raw throughput.

Process Equipment & Material Reference

This Mo1 Pure Molybdenum formula is part of the standard process library running on our wet chemical etching machine. The same chemistry can be ported to any horizontal spray-etching line of comparable nozzle layout and bath-titration discipline.

For a broader treatment of the material itself — alloy variants, surface preparation, and process limits across thickness ranges — see our Molybdenum chemical etching guide. That overview complements the formula-specific bath and conveyor data on this page.

Production Use Cases for This Formula

Parts produced with this Mo1 Pure Molybdenum + H₂O₂(30%)+H₂SO₄(10%) formula end up in a wide range of finished products. Representative production runs we have completed using this exact recipe family include tea-infuser custom filter etching, cold-press juicer filtration mesh, and juicer filtration mesh etching. Each case shares the same root sensitivity: clean photoresist edges, a tightly held bath SG of 1.100, and a conveyor speed inside the 0.12-1.11 m/min envelope.

If your part falls into one of these classes — or a closely adjacent one — this formula is usually the right starting point. We confirm fit with a short sample run on the actual sheet stock before locking in mask artwork.

Other Metals Etched with H₂O₂(30%)+H₂SO₄(10%)

The H₂O₂(30%)+H₂SO₄(10%) chemistry is also documented for these alloys.

More Molybdenum Formulas

Other formulas in the same material family.

Frequently Asked Questions