Tungsten H₂O₂(30%)+NH₃(25%)

Chemical Etching Formula
W-Cu Tungsten Copper with H₂O₂(30%)+NH₃(25%)

For engineers selecting an etching chemistry for W-Cu Tungsten Copper, the H₂O₂(30%)+NH₃(25%) formula shown here defines the bath composition, temperature window, and achievable feature sizes across a 0.05-0.3 mm thickness band. Typical mass-production yield for this recipe is 93.1%, with a typical conveyor speed of 0.20 m/min at 60°C.

Formula Summary

The table below summarizes every parameter that defines this etching formula. Values listed as ranges scale with sheet thickness across the supported band.

H₂O₂(30%)+NH₃(25%) Etchant System
— °Bé Concentration
1.130 Specific Gravity
60 °C Bath Temperature
Through etch (double-sided) Etch Depth Type
0.05-0.3 mm Thickness Range
0.15 mm Typical Thickness
0.12-0.98 m/min Conveyor Speed Range
0.20 m/min Typical Speed
60-360 μm Min Hole Ø Range
100-300 μm Min Line Width Range
11-67 μm Undercut Range
2.25 Etch Factor (EF)
93.1% Typical Yield (92.8-93.4%)

Why H₂O₂(30%)+NH₃(25%) for W-Cu Tungsten Copper?

For W-Cu Tungsten Copper, H₂O₂(30%)+NH₃(25%) provides controllable, regenerable etching with predictable undercut. The chloride or acid species continuously break down the alloy's protective oxide while the oxidizer supplies the electrochemical driving force, producing clean, burr-free edges compatible with standard dry-film and liquid photoresists.

Process Window & Bath Control

Hold the bath at 60°C with concentration as specified (specific gravity 1.130). Across the 0.05-0.3 mm thickness range, conveyor speed runs from 0.12-0.98 m/min — thinner sheets move faster, thicker sheets slower, in roughly inverse proportion to thickness. A typical mid-range setpoint is 0.20 m/min for 0.15 mm stock. Use redundant PID temperature control to hold the bath within ±1.5°C, and titrate at least once per shift.

Design Rules & Tolerances

When laying out artwork for W-Cu Tungsten Copper at through etch (double-sided), plan for a minimum hole diameter in the 60-360 μm range and a minimum line width in the 100-300 μm range, depending on the chosen sheet thickness within 0.05-0.3 mm. The etch factor of ~2.25 and undercut range of 11-67 μm determine how much the mask must be biased to land the finished dimension on target.

Design Rule Summary
• Minimum hole diameter range: 60-360 μm
• Minimum line width range: 100-300 μm
• Single-side undercut range: 11-67 μm
• Typical etch factor (EF): 2.25

Yield & Production Economics

This formula delivers a typical yield of 93.1% (range 92.8-93.4%). At that rate, per-part economics are driven mostly by fixed photomask and setup cost for small batches and by sheet utilisation for large runs. The chemistry itself does not change with quantity, so the same recipe serves prototype and production volumes.

Typical Applications

Typical applications for W-Cu Tungsten Copper processed with H₂O₂(30%)+NH₃(25%) include X-ray collimator grids, electron-beam apertures, and high-density precision masks. The formula's tolerance band and yield make it well suited to medium-to-high-volume precision flat parts.

More Tungsten Formulas

Other formulas in the same material family.

W-Ni-Fe Tungsten Alloy H₂O₂(30%)+NH₃(25%) Through etch (double-sided) W1 Pure Tungsten H₂O₂(30%)+NH₃(25%) Through etch (double-sided)

Frequently Asked Questions

Minimum producible hole diameter ranges 60-360 μm across the 0.05-0.3 mm thickness band, following the 1.2× material-thickness design rule. The smallest holes are only available on the thinnest stock; attempting holes below the floor for a given thickness causes yield to drop sharply.

Need a Quote for This Process?

WET Etched runs production wet chemical etching lines using the H₂O₂(30%)+NH₃(25%) chemistry. Send us your part drawing and quantity for a full process quote.

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