Chemical Etching Formula
Zr702 Pure Zirconium
with HF(5%)+HNO₃(25%)
Formula Summary
The table below summarizes every parameter that defines this etching formula. Values listed as ranges scale with sheet thickness across the supported band.
Why HF(5%)+HNO₃(25%) for Zr702 Pure Zirconium?
Hydrofluoric/nitric formulas are used for refractory and titanium-family metals such as Zr702 Pure Zirconium because the fluoride ion is one of the few species that will break down their tenacious passive oxide. The nitric component oxidizes the freshly exposed metal so the fluoride can keep working. Handling demands are high, but for Zr702 Pure Zirconium there is rarely a practical alternative.
Process Window & Bath Control
The process window for this HF(5%)+HNO₃(25%) formula centres on 34°C and as specified. Conveyor speed spans 0.12-0.77 m/min over the 0.05-0.3 mm thickness band; the typical operating point is 0.17 m/min. Every 5°C drop in bath temperature requires roughly a 30% reduction in conveyor speed to hold the same etch depth, so temperature stability is the single biggest lever on consistency.
Design Rules & Tolerances
When laying out artwork for Zr702 Pure Zirconium at through etch (double-sided), plan for a minimum hole diameter in the 60-360 μm range and a minimum line width in the 100-300 μm range, depending on the chosen sheet thickness within 0.05-0.3 mm. The etch factor of ~2.18 and undercut range of 11-69 μm determine how much the mask must be biased to land the finished dimension on target.
• Minimum hole diameter range: 60-360 μm
• Minimum line width range: 100-300 μm
• Single-side undercut range: 11-69 μm
• Typical etch factor (EF): 2.18
Yield & Production Economics
Expect a yield in the 91.8-92.4% range for Zr702 Pure Zirconium with HF(5%)+HNO₃(25%), with 92.1% typical on a well-controlled line. Most rejects trace back to upstream coating and exposure rather than to the etch bath itself, so tightening photolithography control is usually the fastest path to a higher number.
Typical Applications
Parts produced with the HF(5%)+HNO₃(25%) formula on Zr702 Pure Zirconium are common in nuclear-grade components and corrosion-resistant chemical hardware. The burr-free, stress-free nature of chemical etching makes it the preferred process wherever flatness and edge quality matter more than raw throughput.
More Zirconium Formulas
Other formulas in the same material family.
Frequently Asked Questions
Need a Quote for This Process?
WET Etched runs production wet chemical etching lines using the HF(5%)+HNO₃(25%) chemistry. Send us your part drawing and quantity for a full process quote.