Chemical Etching Formula
SUS630(17-4PH)
with FeCl₃+HCl
Formula Summary
The table below summarizes every parameter that defines this etching formula. Values listed as ranges scale with sheet thickness across the supported band.
Why FeCl₃+HCl for SUS630(17-4PH)?
On SUS630(17-4PH), the ferric chloride system attacks the alloy's oxide layer continuously while ferric ions drive dissolution. It is regenerable, compatible with standard photolithography, and produces clean burr-free edges — which is why nearly every SUS630(17-4PH) etch line runs a variant of this formula.
Process Window & Bath Control
The process window for this FeCl₃+HCl formula centres on 52°C and 46 °Bé. Conveyor speed spans 0.12-21.17 m/min over the 0.01-0.5 mm thickness band; the typical operating point is 1.23 m/min. Every 5°C drop in bath temperature requires roughly a 30% reduction in conveyor speed to hold the same etch depth, so temperature stability is the single biggest lever on consistency.
Design Rules & Tolerances
When laying out artwork for SUS630(17-4PH) at through etch (double-sided), plan for a minimum hole diameter in the 15-600 μm range and a minimum line width in the 100-500 μm range, depending on the chosen sheet thickness within 0.01-0.5 mm. The etch factor of ~2.62 and undercut range of 2-95 μm determine how much the mask must be biased to land the finished dimension on target.
• Minimum hole diameter range: 15-600 μm
• Minimum line width range: 100-500 μm
• Single-side undercut range: 2-95 μm
• Typical etch factor (EF): 2.62
Yield & Production Economics
Typical mass-production yield for SUS630(17-4PH) in the FeCl₃+HCl system is 96.6%, within an observed range of 95.3-97.5%. The dominant yield-loss modes are photoresist pinhole defects and rinse-water contamination. Improving incoming sheet quality and photoresist coating consistency gives the highest yield-improvement leverage for this formula.
Typical Applications
Typical applications for SUS630(17-4PH) processed with FeCl₃+HCl include precision shims, encoder discs, RF/EMI shields, surgical and dental components, fuel-cell bipolar plates, and fine filter meshes. The formula's tolerance band and yield make it well suited to medium-to-high-volume precision flat parts.
Process Equipment & Material Reference
Production of SUS630(17-4PH) parts using the FeCl₃+HCl formula described above runs on a wet chemical etching machine configured for through etch (double-sided). The bath chemistry, conveyor speed, and rinse cascade detailed on this page reflect the operating profile we use on a live spray-etching line for this alloy.
Related to this formula, the Stainless Steel chemical etching guide page documents the full process envelope for the same alloy family, including pre-treatment chemistry and post-etch inspection criteria.
Production Use Cases for This Formula
Typical end-uses for SUS630(17-4PH) run on this formula include stainless filtration mesh for vacuum cleaners, stainless steel mesh for aroma diffusers, and stainless steel shower-head filter mesh. The 52°C bath and 0.01-0.5 mm supported thickness range cover most of the production work in these segments without re-tuning chemistry.
If your part falls into one of these classes — or a closely adjacent one — this formula is usually the right starting point. We confirm fit with a short sample run on the actual sheet stock before locking in mask artwork.
More Stainless Steel Formulas
Other formulas in the same material family.
Frequently Asked Questions
Sources & References
- ASTM E407: Standard Practice for Microetching Metals and Alloys
- ASTM B912: Standard Specification for Passivation of Stainless Steels
- Photo Chemical Machining Institute — process capability guidelines
- NIST Engineering Statistics Handbook — process tolerance and capability
Standards are referenced for context. Always confirm parameters against the current published edition and your own process validation.
Need a Quote for This Process?
WET Etched runs production wet chemical etching lines using the FeCl₃+HCl chemistry. Send us your part drawing and quantity for a full process quote.
