Titanium Alloys HF(5%)+HNO₃(30%)

Chemical Etching Formula
TA1 commercially pure titanium with HF(5%)+HNO₃(30%)

The HF(5%)+HNO₃(30%) chemistry is a proven formula for TA1 commercially pure titanium. This reference sheet lists the concentration (as specified), specific gravity (1.180), bath temperature (32°C), and the full range of conveyor speeds and feature tolerances that result. Use it to size your process before committing to a production trial.

Formula Summary

The table below summarizes every parameter that defines this etching formula. Values listed as ranges scale with sheet thickness across the supported band.

HF(5%)+HNO₃(30%) Etchant System
— °Bé Concentration
1.180 Specific Gravity
32 °C Bath Temperature
Half etch (single-sided) Etch Depth Type
0.01 mm Thickness Range
0.01 mm Typical Thickness
10.1 m/min Conveyor Speed Range
10.10 m/min Typical Speed
15 μm Min Hole Ø Range
100 μm Min Line Width Range
3 μm Undercut Range
2.35 Etch Factor (EF)
95.5% Typical Yield (95.5%)

Why HF(5%)+HNO₃(30%) for TA1 commercially pure titanium?

For TA1 commercially pure titanium, the HF/HNO₃ blend works where chloride chemistries stall: fluoride dissolves the stable oxide, nitric acid re-oxidizes the metal, and the two cycle to give a steady etch. Concentration and temperature control are critical here because the rate is strongly chemistry-dependent.

Process Window & Bath Control

Bath control for TA1 commercially pure titanium in HF(5%)+HNO₃(30%): temperature 32°C, concentration as specified, specific gravity 1.180. The recipe is tuned for half etch (single-sided). Conveyor speed is the primary throughput control, ranging 10.1 m/min across the supported thickness range. Check specific gravity each shift with a calibrated hydrometer and correct with fresh make-up or water as needed.

Design Rules & Tolerances

Design rules for this recipe: hole diameter 15 μm, line width 100 μm, single-side undercut 3 μm — all as a function of thickness across 0.01 mm. The higher the etch factor (this formula holds about 2.35), the tighter the achievable tolerance. Below the minimum feature sizes, yield falls off steeply, so treat those numbers as hard floors rather than targets.

Design Rule Summary
• Minimum hole diameter range: 15 μm
• Minimum line width range: 100 μm
• Single-side undercut range: 3 μm
• Typical etch factor (EF): 2.35

Yield & Production Economics

This formula delivers a typical yield of 95.5% (range 95.5%). At that rate, per-part economics are driven mostly by fixed photomask and setup cost for small batches and by sheet utilisation for large runs. The chemistry itself does not change with quantity, so the same recipe serves prototype and production volumes.

Typical Applications

Typical applications for TA1 commercially pure titanium processed with HF(5%)+HNO₃(30%) include medical implants, surgical instruments, aerospace brackets, and corrosion-resistant filters. The formula's tolerance band and yield make it well suited to medium-to-high-volume precision flat parts.

More Titanium Alloys Formulas

Other formulas in the same material family.

TA1 commercially pure titanium HF(5%)+HNO₃(30%) Through etch (double-sided) TA1 commercially pure titanium HF(5%)+HNO₃(30%) Through etch (double-sided) Ta1 Pure Tantalum HF(8%)+HNO₃(30%) Through etch (double-sided) TA2 commercially pure titanium HF(5%)+HNO₃(30%) Through etch (double-sided) TA3 commercially pure titanium HF(5%)+HNO₃(30%) Through etch (double-sided) TC1 Titanium Alloy HF(5%)+HNO₃(30%) Through etch (double-sided)

Frequently Asked Questions

Standard pre-treatment is degrease, micro-etch to activate the surface, rinse, photoresist lamination or coating, UV exposure through the artwork, and develop. Pre-treatment quality directly drives yield for TA1 commercially pure titanium: poor degreasing causes resist adhesion failures that show up as random pinhole defects in the etched pattern.

Need a Quote for This Process?

WET Etched runs production wet chemical etching lines using the HF(5%)+HNO₃(30%) chemistry. Send us your part drawing and quantity for a full process quote.

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